maximum ratings: (t a =25c unless otherwise noted) symbol units peak repetitive reverse voltage v rrm 40 v dc blocking voltage v r 40 v rms reverse voltage v r(rms) 28 v average forward current i o 1.0 a peak forward surge current i fsm 20 a power dissipation p d 1.2 w operating junction temperature range t j -50 to +125 c storage temperature range t stg -50 to +150 c thermal resistance ja 85 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions typ max units i r v r =40v 20 50 a i r v r =40v, t a =100c 5.0 20 ma v f i f =500ma 360 380 mv v f i f =1.0a 390 440 mv c j v r =4.0v, f=1.0mhz 150 pf CBRHDSH1-40L high density 1.0 amp dual in line low v f schottky bridge rectifier hd dip case central semiconductor corp. tm r1 (23-may 2006) description: the central semiconductor CBRHDSH1-40L type is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. marking code: csh1
central semiconductor corp. tm hd dip case - mechanical outline CBRHDSH1-40L high density 1.0 amp dual in line low v f schottky bridge rectifier r1 (23-may 2006) marking code: csh1
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